FDC3616N

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FDC3616N

January 2004

FDC3616N
100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features
3.7 A, 100 V. RDS(ON) 70 m VGS 10 V RDS(ON) 80 m VGS 6.0 V High performance trench technology for extremely low RDS(ON) Low gate charge (23nC typical) High power and current handling capability Fast switching speed.

Applications
DC/DC converter Load Switching

Bottom Drain

G S S S SuperSOT-6
TM

1
S

6 5 4

2 3

S FLMP

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation

TA 25oC unless otherwise noted

Parameter

Ratings
100 20
(Note 1a)

Units
V V A W C

3.7 20 2 1.1 -55 to 150

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b)

60 111 0.5

C/W

Package Marking and Ordering Information
Device Marking .616 Device FDC3616N Reel Size 7 Tape width 8mm Quantity 3000 units

2004 Fairchild Semiconductor Corporation

FDC3616N Rev C1 (W)

FDC3616N Datasheet Fairchild Download PDF

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FDC3616N DATASHEET