Home

FDC5612

By datasheet - April 3rd, 2008

FDC5612

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FDC5612

December 2004

FDC5612
60V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features 4.3 A, 60 V. RDS(ON) 0.055
VGS 10 V RDS(ON) 0.064 VGS 6 V Low gate charge (12.5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

S D D

1

6

2

5

G D
SuperSOTTM -6
3 4

D
TA 25 C unless otherwise noted

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed

Parameter

Ratings
60 20
(Note 1a)

Units
V V A W C

4.3 20 1.6 0.8 -55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 30

C/W C/W

Package Outlines and Ordering Information
Device Marking
.562

Device
FDC5612

Reel Size
7

Tape Width
8mm

Quantity
3000 units

2004 Fairchild Semiconductor Corporation

FDC5612 Rev. C2

FDC5612 Datasheet Fairchild Download PDF

Add this permalink to your bookmarks for future download of FDC5612 datasheet

Permalink: http://datasheet.emcelettronica.com/fairchild/FDC5612

-->