FDC5614P

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FDC5614P

February 2002

FDC5614P
60V P-Channel Logic Level PowerTrench MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management applications.

Features
3 A, 60 V. RDS(ON) 0.105 VGS 10 V RDS(ON) 0.135 VGS 4.5 V

Applications
DC-DC converters Load switch Power management

Fast switching speed High performance trench technology for extremely low RDS(ON)

D

D

S

1 2
G

6 5 4

SuperSOT TM -6

D

D

3

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation

TA 25oC unless otherwise noted

Parameter

Ratings
60 20
(Note 1a)

Units
V V A W C

3 20 1.6 0.8 55 to 150

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 30

C/W C/W

Package Marking and Ordering Information
Device Marking .564 Device FDC5614P Reel Size 7 Tape width 8mm Quantity 3000 units

2002 Fairchild Semiconductor Corporation

FDC5614P Rev C1 (W)

FDC5614P Datasheet Fairchild Download PDF

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FDC5614P DATASHEET