FDC6000NZ

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FDC6000NZ

June 2004

FDC6000NZ
Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild s Semiconductor s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V). Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

Features
6.5 A, 20 V RDS(ON) 20 m VGS 4.5 V RDS(ON) 28 m VGS 2.5 V

ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size
Bottom Drain Contact

Applications
Battery management/Charger Application Load switch

S2 S1 G1 S2 SuperSOT-6
TM

4
G2

3 2 1
Bottom Drain Contact

5 6

S1 FLMP
TA 25oC unless otherwise noted

MOSFET Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
20 12
(Note 1a)

Units
V V A W

7.3 20 1.6 1.8 1.2 55 to 150

Power Dissipation for Dual Operation Power Dissipation for Single Operation

(Note 1a) (Note 1a) (Note 1b)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJc Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1a)

68 1

C/W

Package Marking and Ordering Information
Device Marking .0NZ
2004 Fairchild Semiconductor Corporation

Device FDC6000NZ

Reel Size 7

Tape width 8mm

Quantity 3000 units
FDC6000NZ Rev E1 (W)

FDC6000NZ Datasheet Fairchild Download PDF

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FDC6000NZ DATASHEET