FDC602P

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FDC602P

April 2001

FDC602P
P-Channel 2.5V PowerTrench Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).

Features
5.5 A, 20 V RDS(ON) 35 m V GS 4.5 V RDS(ON) 50 m V GS 2.5 V

Fast switching speed High performance trench technology for extremely low RDS(ON)

Applications
Battery management Load switch Battery protection

D

D

S

1 2
G

6 5 4

SuperSOT -6

TM

D

D

3

Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation

TA 25oC unless otherwise noted

Parameter

Ratings
20
(Note 1a)

Units
V V A W C

12 5.5 20 1.6 0.8 55 to 150

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJ C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 30

C/W C/W

Package Marking and Ordering Information
Device Marking .602 Device FDC602P Reel Size 7 Tape width 8mm Quantity 3000 units

2001 Fairchild Semiconductor Corporation

FDC602P Rev C(W)

FDC602P Datasheet Fairchild Download PDF

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FDC602P DATASHEET