FDC6036P

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FDC6036P

January 2004

FDC6036P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This dual P-Channel 1.8V specified MOSFET uses Fairchild s advanced low voltage PowerTrench process. Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

Features
5 A, 20 V. RDS(ON) 44 m VGS 4.5 V RDS(ON) 64 m VGS 2.5 V RDS(ON) 95 m VGS 1.8 V Low gate charge, High Power and Current handling capability High performance trench technology for extremely low RDS(ON) FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size
Bottom Drain Contact

Applications
Battery management/Charger Application Load switch

4 5 6
Bottom Drain Contact

3 2 1

MOSFET Maximum Ratings
Symbol
VDSS VGSS ID PD

TA 25oC unless otherwise noted

Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1a)

Ratings
20 8 5 20 1.8 1.8 0.9 55 to 150

Units
V V A

W

TJ, Tstg

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC .036
2004 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a)

68 1

C/W

Package Marking and Ordering Information
FDC6036P 7 8mm 3000 units
FDC6036P Rev C2 (W)

FDC6036P Datasheet Fairchild Download PDF

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FDC6036P DATASHEET