FDC606P

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FDC606P

December 2001

FDC606P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild s low voltage PowerTrench process. It has been optimized for battery power management applications.

Features
6 A, 12 V. RDS(ON) 26 m VGS 4.5 V RDS(ON) 35 m VGS 2.5 V RDS(ON) 53 m VGS 1.8 V

Applications
Battery management Load switch Battery protection

Fast switching speed High performance trench technology for extremely low RDS(ON)

D

D

S

1 2
G

6 5 4

SuperSOT TM -6

D

D

3

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation

TA 25oC unless otherwise noted

Parameter

Ratings
12 8
(Note 1a)

Units
V V A W C

6 20 1.6 0.8 55 to 150

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 30

C/W C/W

Package Marking and Ordering Information
Device Marking .606 Device FDC606P Reel Size 7 Tape width 8mm Quantity 3000 units

2001 Fairchild Semiconductor Corporation

FDC606P Rev E (W)

FDC606P Datasheet Fairchild Download PDF

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FDC606P DATASHEET