FDC608PZ

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FDC608PZ

June 2006

FDC608PZ
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.

tm

Features
5.8 A, 20 V. RDS(ON) 30 m VGS 4.5 V RDS(ON) 43 m VGS 2.5 V Low Gate Charge High performance trench technology for extremely low RDS(ON) SuperSOT
TM

6 package: small footprint (72%

smaller than standard SO 8) low profile (1mm thick).

D

D

S

1 2

6 5 4

SuperSOT TM -6

D

D

G

3

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation

TA 25oC unless otherwise noted

Parameter

Ratings
20 12
(Note 1a)

Units
V V A W C

5.8 20 1.6 0.8 55 to 150

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Device FDC608PZ
(Note 1a) (Note 1)

78 30 Tape width 8mm

C/W C/W Quantity 3000 units

Package Marking and Ordering Information
Device Marking .608Z Reel Size 7

2006 Fairchild Semiconductor Corporation

FDC608PZ Rev B (W)

FDC608PZ Datasheet Fairchild Download PDF

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FDC608PZ DATASHEET