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FDC6306P

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FDC6306P

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FDC6306P

February 1999

FDC6306P
Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Features
-1.9 A, -20 V. RDS(on) 0.170 VGS -4.5 V RDS(on) 0.250 VGS -2.5 V

Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

Applications Load switch Battery protection Power management
D2 S1 D1

4

3

5

2

G2

SuperSOT TM -6

S2 G1
TA 25 C unless otherwise noted

6

1

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed

Parameter

Ratings
-20
(Note 1a)

Units
V V A W

8 -1.9 -5 0.96 0.9 0.7 -55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, Tstg

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

130 60

C/W C/W

Package Outlines and Ordering Information
Device Marking .306 Device
FDC6306P

Reel Size
7

Tape Width
8mm

Quantity
3000 units

1999 Fairchild Semiconductor Corporation

FDC6306P Rev. C

FDC6306P Datasheet Fairchild Download PDF

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