FDC6310P

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FDC6310P

April 2001

FDC6310P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Features
2.2 A, 20 V. RDS(ON) 125 m V GS 4.5 V RDS(ON) 190 m V GS 2.5 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8); low profile (1mm thick)

Applications
Load switch Battery protection Power management

D2 S1 D1 4 5 G2 S2 G1
TA 25oC unless otherwise noted

3 2 1

SuperSOT

TM

6

-6

Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
20 12
(Note 1a)

Units
V V A W

2.2 6 0.96 0.9 0.7 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ , TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJ C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

130 60

C/W C/W

Package Marking and Ordering Information
Device Marking .310
2001 Fairchild Semiconductor Corporation

Device FDC6310P

Reel Size 7

Tape width 8mm

Quantity 3000 units
FDC6310P Rev C(W)

FDC6310P Datasheet Fairchild Download PDF

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FDC6310P DATASHEET