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FDC6312P

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FDC6312P

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FDC6312P

January 2001

FDC6312P
Dual P-Channel 1.8V PowerTrench Specified MOSFET
General Description
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features
2.3 A, 20 V. RDS(ON) 115 m VGS 4.5 V RDS(ON) 155 m VGS 2.5 V RDS(ON) 225 m VGS 1.8 V High performance trench technology for extremely low RDS(ON) SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

Applications
Power management Load switch

D2 S1 D1

4 5
G2

3 2 1

SuperSOT

TM

-6

S2 G1
TA 25oC unless otherwise noted

6

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
20 8
(Note 1a)

Units
V V A W

2.3 7 0.96 0.9 0.7 -55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

130 60

C/W C/W

Package Marking and Ordering Information
Device Marking .312 Device FDC6312P Reel Size 13 Tape width 12mm Quantity 3000 units

2001 Fairchild Semiconductor Corporation

FDC6312P Rev C (W)

FDC6312P Datasheet Fairchild Download PDF

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