FDC6318P

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FDC6318P

December 2001

FDC6318P
Dual P-Channel 1.8V PowerTrench Specified MOSFET
General Description
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features
2.5 A, 12 V. RDS(ON) 90 m VGS 4.5 V RDS(ON) 125 m VGS 2.5 V RDS(ON) 200 m VGS 1.8 V High performance trench technology for extremely low RDS(ON) SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

Applications
Power management Load switch

S1 D1

D2

4 5
G2

3 2 1

SuperSOT

TM

-6

G1

S2

6

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
12 8
(Note 1a)

Units
V V A W

2.5 7 0.96 0.9 0.7 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

130 60

C/W C/W

Package Marking and Ordering Information
Device Marking .318 Device FDC6318P Reel Size 13 Tape width 12mm Quantity 3000 units

2001 Fairchild Semiconductor Corporation

FDC6318P Rev D (W)

FDC6318P Datasheet Fairchild Download PDF

Add this permalink to your bookmarks for future download of FDC6318P datasheet

Permalink: http://datasheet.emcelettronica.com/fairchild/FDC6318P

FDC6318P DATASHEET