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FDJ127P

By datasheet - April 3rd, 2008

FDJ127P

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FDJ127P

July 2004

FDJ127P
P-Channel -1.8 Vgs Specified PowerTrench MOSFET
General Description
This P-Channel -1.8V specified MOSFET uses Fairchild s advanced low voltage Power Trench process. It has been optimized for battery power management applications.

Features
4.1 A, 20 V. RDS(ON) 60 m VGS 4.5 V RDS(ON) 85 m VGS 2.5 V RDS(ON) 133 m VGS 1.8 V Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC75-6 surface mount package

Applications
Battery management Load switch

S S

G

Bottom Drain

4 5

3 2 1

SC75-6 FLMP

S

S

S

6

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation

TA 25oC unless otherwise noted

Parameter

Ratings
20 8
(Note 1)

Units
V V A W C

4.1 16 1.6 55 to 150

(Note 1)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
Note 1)

77

C/W

Package Marking and Ordering Information
Device Marking .C Device FDJ127P Reel Size 7 Tape width 8mm Quantity 3000 units

2004 Fairchild Semiconductor Corporation

FDJ127P Rev B2 (W)

FDJ127P Datasheet Fairchild Download PDF

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