FDJ128N

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FDJ128N

August 2004

FDJ128N
N-Channel 2.5 Vgs Specified PowerTrench MOSFET
General Description
This N-Channel -2.5V specified MOSFET uses Fairchild s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features
5.5 A, 20 V. RDS(ON) 35 m VGS 4.5 V RDS(ON) 51 m VGS 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC75-6 surface mount package

Applications
Battery management

S S

G

S

S

S

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
20 12
(Note 1a)

Units
V V A W C

5.5 16 1.6

Power Dissipation for Single Operation

(Note 1a)

Operating and Storage Junction Temperature Range

55 to 150

Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a)

77

C/W

Package Marking and Ordering Information
Device Marking .B Device FDJ128N Reel Size 7 Tape width 8mm Quantity 3000 units

2004 Fairchild Semiconductor Corporation

FDJ128N Rev B2 W)

FDJ128N Datasheet Fairchild Download PDF

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FDJ128N DATASHEET