FDMB506P

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FDMB506P

December 2005

FDMB506P
P-Channel 1.8V Logic Level PowerTrench MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

Features
6.8 A, 20V. RDS(ON) 30 m VGS 4.5V RDS(ON) 38 m VGS 2.5V RDS(ON) 70 m VGS 1.8V Low profile 0.8 mm maximum Fast switching

Applications
Load switch DC/DC Conversion

RoHS compliant

PIN 1

GATE

S D
SOURCE

5 6 7 8

4 3 2 1

G D D D

D D

MicroFET
3x1.9

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation

TA 25oC unless otherwise noted

Parameter

Ratings
20 8
(Note 1a)

Units
V V A W C

6.8 70 1.9 55 to 150

(Note 1a)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)

65 208

C/W

Package Marking and Ordering Information
Device Marking 506 Device FDMB506P Reel Size 7 Tape width 8mm Quantity 3000 units

2005 Fairchild Semiconductor Corporation

FDMB506P Rev C2(W)

FDMB506P Datasheet Fairchild Download PDF

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FDMB506P DATASHEET