FDMC2674

FDMC2674 N-Channel UltraFET Trench MOSFET

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FDMC2674 N-Channel UltraFET Trench MOSFET

January 2007

FDMC2674 N-Channel UltraFET Trench MOSFET
220V, 7.0A, 366m Features
Max rDS(on) 366m at VGS 10V, ID 1.0A Typ Qg 12.7nC at VGS 10V Low Miller charge Low Qrr Body Diode Optimized efficiency at high frequencies UIS Capability ( Single Pulse and Repetitive Pulse) RoHS Compliant

General Description
UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Application
DC/DC converters and Off-Line UPS Distributed Power Architectures

Bottom

Top

8 D 1 D

D D D

5 6 7 8

4 G 3 S 2 S 1 S

Power 33

MOSFET Maximum Ratings TA 25 C unless otherwise noted
Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC 25 C TA 25 C (Note 1a) TC 25 C TA 25 C (Note 1b) Ratings 220 20 7.0 1.0 13.8 42 2.1 -55 to 150 W C A Units V V

Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 3.0 60 C/W

Package Marking and Ordering Information
Device Marking FDMC2674 Device FDMC2674 Package Power 33 Reel Size 7 Tape Width 8mm Quantity 3000 units

2006 Fairchild Semiconductor Corporation FDMC2674 Rev.F

www.fairchildsemi.com