FDMS2672

FDMS2672 N-Channel UltraFET Trench MOSFET

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FDMS2672 N-Channel UltraFET Trench MOSFET

February 2007

FDMS2672 N-Channel UltraFET Trench MOSFET
200V, 20A, 77m Features General Description
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Max rDS(on) 77m at VGS 10V, ID 3.7A Max rDS(on) 88m at VGS 6V, ID 3.5A Low Miller Charge RoHS Compliant

Application
DC - DC Conversion

Pin 1

D D D
D D D D

5 6 7 8

4 G 3 S 2 S 1 S

Power 56 (Bottom view)

MOSFET Maximum Ratings TA 25 C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC 25 C TA 25 C (Note 1a) TC 25 C TA 25 C (Note 1a) Ratings 200 20 20 3.7 20 78 2.5 -55 to 150 W C A Units V V

Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 C/W

Package Marking and Ordering Information
Device Marking FDMS2672 Device FDMS2672 Package Power 56 Reel Size 13 Tape Width 12mm Quantity 3000 units

2007 Fairchild Semiconductor Corporation FDMS2672 Rev.C

www.fairchildsemi.com