FDN302P

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FDN302P

October 2000

FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).

Features
20 V, 2.4 A. RDS(ON) 0.055 VGS 4.5 V RDS(ON) 0.080 VGS 2.5 V

Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

Applications
Power management Load switch Battery protection

D

D

S
G S

SuperSOT -3

TM

G
TA 25oC unless otherwise noted

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation

Parameter

Ratings 20
12
(Note 1a)

Units
V V A W C

2.4 10
0.5 0.46

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

55 to 150
250 75

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

C/W C/W

Package Marking and Ordering Information
Device Marking 302 Device FDN302P Reel Size 7 Tape width 8mm Quantity 3000 units

2000 Fairchild Semiconductor Corporation

FDN302P Rev C(W)

FDN302P Datasheet Fairchild Download PDF

Add this permalink to your bookmarks for future download of FDN302P datasheet

Permalink: http://datasheet.emcelettronica.com/fairchild/FDN302P

FDN302P DATASHEET