FDN306P

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FDN306P

December 2001

FDN306P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features
2.6 A, 12 V. RDS(ON) 40 m VGS 4.5 V RDS(ON) 50 m VGS 2.5 V RDS(ON) 80 m VGS 1.8 V

Applications
Battery management Load switch Battery protection

Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

D

D

S
SuperSOT -3
TM

G
TA 25oC unless otherwise noted

G

S

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation

Parameter

Ratings
12 8
(Note 1a)

Units
V V A W C

2.6 10
0.5 0.46 55 to 150

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

250 75

C/W C/W

Package Marking and Ordering Information
Device Marking 306 Device FDN306P Reel Size 7 Tape width 8mm Quantity 3000 units

2001 Fairchild Semiconductor Corporation

FDN306P Rev D (W)

FDN306P Datasheet Fairchild Download PDF

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FDN306P DATASHEET