FDN327N

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

FDN327N

October 2001

FDN327N
N-Channel 1.8 Vgs Specified PowerTrench MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management applications.

Features
2 A, 20 V. RDS(ON) 70 m VGS 4.5 V RDS(ON) 80 m VGS 2.5 V RDS(ON) 120 m VGS 1.8 V

Applications
Load switch Battery protection Power management

Low gate charge (4.5 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON)

D

D

S
G S

SuperSOT -3

TM

G
TA 25 C unless otherwise noted
o

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
20 8
(Note 1a)

Units
V V A W C

2 8 0.5 0.46 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

250 75

C/W C/W

Package Marking and Ordering Information
Device Marking 327 Device FDN327N Reel Size 7 Tape width 8mm Quantity 3000 units

2001 Fairchild Semiconductor Corporation

FDN327N Rev C (W)

FDN327N Datasheet Fairchild Download PDF

Add this permalink to your bookmarks for future download of FDN327N datasheet

Permalink: http://datasheet.emcelettronica.com/fairchild/FDN327N

FDN327N DATASHEET