FDN335N

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FDN335N

April 1999

FDN335N
N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features
1.7 A, 20 V. RDS(ON) 0.07 VGS 4.5 V RDS(ON) 0.100 VGS 2.5 V. Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.

Applications DC/DC converter Load switch

D

D

S
SuperSOT -3
TM

G
TA 25 C unless otherwise noted

G

S

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed

Parameter

Ratings
20
(Note 1a)

Units
V V A W C

8 1.7 8 0.5 0.46 -55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

250 75

C/W C/W

Package Outlines and Ordering Information
Device Marking
335
1999 Fairchild Semiconductor Corporation

Device
FDN335N

Reel Size
7

Tape Width
8mm

Quantity
3000 units
FDN335N Rev. C

FDN335N Datasheet Fairchild Download PDF

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FDN335N DATASHEET