FDN336P

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FDN336P

January 2005

FDN336P
Single P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion.

Features
1.3 A, 20 V. RDS(ON) 0.20 VGS 4.5 V RDS(ON) 0.27 VGS 2.5 V Low gate charge (3.6 nC typical) High performance trench technology for extremely low RDS(ON) SuperSOT
TM

-3 provides low RDS(ON) and 30%

higher power handling capability than SOT23 in the same footprint

D

D

S
G S

SuperSOT -3

TM

G
TA 25oC unless otherwise noted

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation

Parameter

Ratings
20 8
(Note 1a)

Units
V V A W C

1.3 10 0.5 0.46 55 to 150

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

250 75

C/W C/W

Package Marking and Ordering Information
Device Marking 336 Device FDN336P Reel Size 7 Tape width 8mm Quantity 3000 units

2005 Fairchild Semiconductor Corporation

FDN306P Rev D

FDN336P Datasheet Fairchild Download PDF

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FDN336P DATASHEET