April 1999

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April 1999

FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
2.7 A, 30 V. RDS(ON) 0.046 VGS 10 V RDS(ON) 0.060 VGS 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.

SOT-23

SuperSOTTM -6

SuperSOTTM -8

SO-8

SOT-223

SOIC-16

D

D

9A 35
S
SuperSOT -3
TM

G

G

S

Absolute Maximum Ratings
Symbol Parameter

TA 25oC unless other wise noted
Ratings Units

VDSS VGSS ID PD TJ,TSTG RJA RJC

Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1a)

30 20 2.7 15 0.5 0.46 -55 to 150

V V A

W

Operating and Storage Temperature Range

C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

250 75

C/W C/W

1999 Fairchild Semiconductor Corporation

FDN359AN Rev.C

FDN359AN Datasheet Fairchild Download PDF

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FDN359AN DATASHEET