FDN359BN

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FDN359BN

January 2006

FDN359BN
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features 2.7 A, 30 V.

RDS(ON) 0.046 VGS 10 V RDS(ON) 0.060 VGS 4.5 V

Very fast switching speed. Low gate charge (5nC typical) High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.

D

D

S
G S

SuperSOT -3

TM

G
TA 25oC unless otherwise noted

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage

Parameter

Ratings
30 20
(Note 1a)

Units
V V A

Maximum Drain Current Continuous Pulsed Maximum Power Dissipation Operating and Storage Temperature Range

2.7 15 0.5 0.46 -55 to 150

(Note 1a) (Note 1b)

W C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

250 75

C/W C/W

Package Marking and Ordering Information
Device Marking 359B Device FDN359BN Reel Size 7 Tape width 8mm Quantity 3000 units

2006 Fairchild Semiconductor Corporation

FDN359BN Rev A(W)

FDN359BN Datasheet Fairchild Download PDF

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FDN359BN DATASHEET