FDN360P

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FDN360P

May 2003

FDN360P
Single P-Channel, PowerTrench MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
2 A, 30 V. RDS(ON) 80 m VGS 10 V RDS(ON) 125 m VGS 4.5 V

Low gate charge (6.2 nC typical) High performance trench technology for extremely low RDS(ON) . High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.

D

D

S
G S

SuperSOT -3

TM

G
TA 25oC unless otherwise noted

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
30 20
(Note 1a)

Units
V V A

2 10 0.5 0.46 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

W C

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

250 75

C/W C/W

Package Marking and Ordering Information
Device Marking 360 Device FDN360P Reel Size 7 Tape width 8mm Quantity 3000 units

2003 Fairchild Semiconductor Corporation

FDN360P Rev F1 (W)

FDN360P Datasheet Fairchild Download PDF

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FDN360P DATASHEET