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FDN361AN

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FDN361AN

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FDN361AN

April 1999

FDN361AN
N-Channel, Logic Level, PowerTrench
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features 1.8 A, 30 V. RDS(on) 0.100
VGS 10 V RDS(on) 0.150 VGS 4.5 V. Low gate charge ( 2.1nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(on). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.

Applications DC/DC converter Load switch Motor drives

D

D

S
SuperSOT -3
TM

G
TA 25 C unless otherwise noted
o

G

S

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage

Parameter
Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1a)

FDN361AN
30 20 1.8 8 0.5 0.46 -55 to 150

Units
V V A W C

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

250 75

C/W C/W

Package Marking and Ordering Information
Device Marking
361

Device
FDN361AN

Reel Size
7

Tape width
8mm

Quantity
3000 units

1998 Fairchild Semiconductor Corporation

FDN361AN, Rev. C

FDN361AN Datasheet Fairchild Download PDF

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