FDN372S
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FDN372S
September 2002
FDN372S
30V N-Channel PowerTrench SyncFETTM
General Description
The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor s monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter.
Features
2.6 A, 30 V. RDS(ON) 40 m VGS 10 V RDS(ON) 50 m VGS 4.5 V
Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON)
Applications
DC-DC Converter Motor Drives
D
D
S
G S
SuperSOT -3
TM
G
TA 25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
30 16
(Note 1a)
Units
V V A W C
2.6 10 0.5 0.46 55 to 150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
C/W C/W
Package Marking and Ordering Information
Device Marking 372 Device FDN372S Reel Size 7 Tape width 8mm Quantity 3000 units
2002 Fairchild Semiconductor Corporation
FDN372S Rev C(W)
FDN372S Datasheet Fairchild Download PDF
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