FDN372S

FDN372S

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FDN372S

September 2002

FDN372S
30V N-Channel PowerTrench SyncFETTM
General Description
The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor s monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter.

Features
2.6 A, 30 V. RDS(ON) 40 m VGS 10 V RDS(ON) 50 m VGS 4.5 V

Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON)

Applications
DC-DC Converter Motor Drives

D

D

S
G S

SuperSOT -3

TM

G
TA 25oC unless otherwise noted

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
30 16
(Note 1a)

Units
V V A W C

2.6 10 0.5 0.46 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

250 75

C/W C/W

Package Marking and Ordering Information
Device Marking 372 Device FDN372S Reel Size 7 Tape width 8mm Quantity 3000 units

2002 Fairchild Semiconductor Corporation

FDN372S Rev C(W)

FDN372S Datasheet Fairchild Download PDF

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