FDN5618P

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FDN5618P

October 2000

FDN5618P
60V P-Channel Logic Level PowerTrench MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management applications.

Features
1.25 A, 60 V. RDS(ON) 0.170 VGS 10 V RDS(ON) 0.230 VGS 4.5 V Fast switching speed High performance trench technology for extremely low RDS(ON)

Applications
DC-DC converters Load switch Power management

D

D

S
SuperSOT -3
TM

G
TA 25oC unless otherwise noted

G

S

Absolute Maximum Ratings
Symbol
VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed PD TJ, TSTG Maximum Power Dissipation

Parameter

Ratings
60 20
(Note 1a)

Units
V V A W C

1.25 10 0.5 0.46 55 to 150

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

250 75

C/W C/W

Package Marking and Ordering Information
Device Marking 618 Device FDN5618P Reel Size 7 Tape width 8mm Quantity 3000 units

2000 Fairchild Semiconductor Corporation

FDN5618P Rev C(W)

FDN5618P Datasheet Fairchild Download PDF

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FDN5618P DATASHEET