FDN5630

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FDN5630

March 2000

FDN5630
60V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. Fairchild s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space.

Features
1.7 A, 60 V. RDS(ON) 0.100 VGS 10 V RDS(ON) 0.120 VGS 6 V. Optimized for use in high frequency DC/DC converters. Low gate charge. Very fast switching. SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint.

Applications
DC/DC converter Motor drives

D

D

S
SuperSOT -3
TM

G
TA 25 C unless otherwise noted

G

S

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed

Parameter

Ratings
60 20
(Note 1a)

Units
V V A W C

1.7 10 0.5 0.46 -55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

250 75

C/W C/W

Package Marking and Ordering Information
Device Marking
5630

Device
FDN5630

Reel Size
7

Tape Width
8mm

Quantity
3000 units

2000 Fairchild Semiconductor Corporation

FDN5630 Rev. C

FDN5630 Datasheet Fairchild Download PDF

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FDN5630 DATASHEET