FDP038AN06A0

FDP038AN06A0 / FDI038AN06A0

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FDP038AN06A0 / FDI038AN06A0

February 2005

FDP038AN06A0 / FDI038AN06A0
N-Channel PowerTrench MOSFET 60V, 80A, 3.8m
Features
rDS(ON) 3.5m (Typ.), VGS 10V, ID 80A Qg(tot) 95nC (Typ.), VGS 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 82584

Applications
Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems

DRAIN (FLANGE)

SOURCE DRAIN SOURCE DRAIN GATE GATE

G
DRAIN (FLANGE)

TO-220AB
FDP SERIES

TO-262AB
FDI SERIES

MOSFET Maximum Ratings TC 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC 151oC, VGS 10V) Continuous (Tamb 25oC, VGS 10V, with RJA 62oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 80 17 Figure 4 625 310 2.07 -55 to 175 A A A mJ W W/oC
oC

Ratings 60 20

Units V V

Thermal Characteristics
RJC RJA Thermal Resistance Junction to Case TO-220, TO-262 Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) 0.48 62
o o

C/W C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2005 Fairchild Semiconductor Corporation

FDP038AN06A0 / FDI038AN06A0 Rev. B