FDP047AN08A0

FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0

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FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0

June 2004

FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench MOSFET 75V, 80A, 4.7m
Features
rDS(ON) 4.0m (Typ.), VGS 10V, ID 80A Qg(tot) 92nC (Typ.), VGS 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 82684

Applications
42V Automotive Load Control Starter / Alternator Systems Electronic Power Steering Systems Electronic Valve Train Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V systems

DRAIN (FLANGE)

SOURCE DRAIN SOURCE DRAIN GATE GATE

SOURCE DRAIN GATE

DRAIN (FLANGE) DRAIN (FLANGE)

G S

TO-220AB
FDP SERIES

TO-262AB
FDI SERIES

TO-247
FDH SERIES

MOSFET Maximum Ratings TC 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC 144oC, VGS 10V) Continuous (TC 25oC, VGS 10V, with RJA 62oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 80 15 Figure 4 475 310 2.0 -55 to 175 A A A mJ W W/oC
o

Ratings 75 20

Units V V

Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-220, TO-262, TO-247 Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) Thermal Resistance Junction to Ambient TO-247 (Note 2) 0.48 62 30
oC/W o o

C/W C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2004 Fairchild Semiconductor Corporation

FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C