FDP050AN06A0

FDB050AN06A0 / FDP050AN06A0

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FDB050AN06A0 / FDP050AN06A0

February 2003

FDB050AN06A0 / FDP050AN06A0
N-Channel PowerTrench MOSFET 60V, 80A, 5m
Features
r DS(ON) 4.3m (Typ.), V GS 10V, ID 80A Qg(tot) 61nC (Typ.), VGS 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 82575

Applications
Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems

DRAIN (FLANGE)

D
SOURCE DRAIN GATE SOURCE GATE

TO-220AB
FDP SERIES

TO-263AB
FDB SERIES

DRAIN (FLANGE)

MOSFET Maximum Ratings TC 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC 135oC, VGS 10V) Continuous (TA 25oC, VGS 10V, R JA 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 80 18 Figure 4 470 245 1.63 -55 to 175 A A A mJ W W/oC
o

Ratings 60 20

Units V V

Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.61 62 43
oC/W o o

C/W C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2003 Fairchild Semiconductor Corporation

FDB050AN06A0 / FDP050AN06A0 Rev. A