FDP120AN15A0

FDP120AN15A0 / FDD120AN15A0

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FDP120AN15A0 / FDD120AN15A0

September 2002

FDP120AN15A0 / FDD120AN15A0
N-Channel PowerTrench MOSFET 150V, 14A, 120m
Features
r DS(ON) 101m (Typ.), VGS 10V, ID 4A Qg(tot) 11.2nC (Typ.), V GS 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 82845

Applications
DC/DC Converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Electronic Valve Train Systems

DRAIN (FLANGE) DRAIN (FLANGE) SOURCE DRAIN GATE TO-220AB FDP SERIES SOURCE GATE

G S
TO-252AA FDD SERIES

MOSFET Maximum Ratings TC 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC 25oC, VGS 10V) ID Continuous (TC 100oC, VGS 10V) Continuous (Tamb 25oC, VGS 10V) with RJA 52oC/W Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 14 9.7 2.8 Figure 4 122 65 0.43 -55 to 175 A A A A mJ W W/oC
o

Ratings 150 20

Units V V

Thermal Characteristics
RJC RJA RJA RJA Thermal Resistance Junction to Case TO-252, TO-220 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-220 (Note 2) Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
2

2.31 100 62 52

oC/W o o o

C/W C/W C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2002 Fairchild Semiconductor Corporation FDP120AN15A0 / FDD120AN15A0 Rev. B