FDP14AN06LA0

FDB14AN06LA0 / FDP14AN06LA0

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FDB14AN06LA0 / FDP14AN06LA0

January 2004

FDB14AN06LA0 / FDP14AN06LA0
N-Channel PowerTrench MOSFET 60V, 60A, 14.6m
Features
r DS(ON) 12.8m (Typ.), VGS 5V, ID 60A Qg(tot) 24nC (Typ.), VGS 5V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 83557

Applications
Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems

DRAIN (FLANGE)

D
SOURCE DRAIN GATE SOURCE TO-220AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) GATE

G S

MOSFET Maximum Ratings TC 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC 25oC, VGS 10V) ID Continuous (TC 25oC, VGS 5V) Continuous (TA 25oC, VGS 5V, RJA 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 67 60 10 Figure 4 46 125 0.83 -55 to 175 A A A A mJ W W/oC
o

Ratings 60 20

Units V V

Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.2 62 43
oC/W o o

C/W C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2004 Fairchild Semiconductor Corporation FDB14AN06LA0 / FDP14AN06LA0 Rev. B