FDP15N65 / FDPF15N65 650V N-Channel MOSFET

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FDP15N65 / FDPF15N65 650V N-Channel MOSFET

UniFET
FDP15N65 / FDPF15N65
650V N-Channel MOSFET Features
15A, 650V, RDS(on) 0.44 VGS 10 V Low gate charge ( typical 48.5 nC) Low Crss ( typical 23.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability

April 2007

TM

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D

G G DS

TO-220
FDP Series

GD S

TO-220F
FDPF Series

S

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FDP15N65
15 9.5 60

FDPF15N65
650 15 9.5 60

Unit
V A A A V mJ A mJ V/ns

30 637 15 25.0 4.5 250 2.0 -55 to 150 300 38.5 0.3

W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Drain current limited by maximum junction termperature.

Thermal Characteristics
Symbol
RJC RCS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

FDP15N65
0.5 0.5 62.5

FDPF15N65
3.3 -62.5

Unit
C/W C/W C/W

2007 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FDP15N65 / FDPF15N65 Rev. B

FDP15N65 Datasheet Fairchild Download PDF

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FDP15N65 DATASHEET