FDP16AN08A0

FDP16AN08A0 / FDB16AN08A0

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FDP16AN08A0 / FDB16AN08A0

July 2002

FDP16AN08A0 / FDB16AN08A0
N-Channel PowerTrench MOSFET 75V, 58A, 16m
Features
r DS(ON) 13m (Typ.), VGS 10V, ID 58A Qg(tot) 28nC (Typ.), VGS 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 82660

Applications
42V Automotive Load Control Starter / Alternator Systems Electronic Power Steering Systems Electronic Valve Train Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V systems

DRAIN (FLANGE)

D
SOURCE DRAIN GATE SOURCE GATE

G
TO-263AB FDB SERIES DRAIN (FLANGE)

TO-220AB
FDP SERIES

MOSFET Maximum Ratings TC 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC 25oC, VGS 10V) ID Continuous (TC 100oC, VGS 10V) Continuous (Tamb 25oC, VGS 10V, with RJA 43oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 58 44 9 Figure 4 117 135 0.9 -55 to 175 A A mJ W W/oC
o

Ratings 75 20

Units V V A

Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.11 62 43
o o o

C/W C/W C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2002 Fairchild Semiconductor Corporation FDP16AN08A0 / FDB16AN08A0 Rev. A1