FDP18N50 / FDPF18N50 500V N-Channel MOSFET

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FDP18N50 / FDPF18N50 500V N-Channel MOSFET

April 2007

FDP18N50 / FDPF18N50
500V N-Channel MOSFET Features
18A, 500V, RDS(on) 0.265 VGS 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability

UniFET
Description

TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D

G G DS

TO-220
FDP Series

GD S

TO-220F
FDPF Series

S

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FDP18N50
500 18 10.8 72 30 945 18

FDPF18N50
18 10.8 72

Unit
V A A A V mJ A mJ V/ns

23.5 4.5 235 1.88 -55 to 150 300 38.5 0.3

W W/ C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds

Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol
RJC RCS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient

FDP18N50
0.53 0.5 62.5

FDPF18N50
3.3 -62.5

Unit
C/W C/W C/W

2007 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FDP18N50 / FDPF18N50 Rev. B

FDP18N50 Datasheet Fairchild Download PDF

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FDP18N50 DATASHEET