FDS6679

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FDS6679

March 2005

FDS6679
30 Volt P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features
13 A, 30 V. RDS(ON) 9 m VGS 10 V RDS(ON) 13 m VGS 4.5 V Extended VGSS range ( 25V) for battery applications High performance trench technology for extremely low RDS(ON) High power and current handling capability

D D

D

D
5 6 4 3 2 1

SO-8

S

S

S

G

7 8

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 25
(Note 1a)

Units
V V A W

13 50 2.5 1.2 1.0 55 to 175

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

50 25

C/W C/W

Package Marking and Ordering Information
Device Marking FDS6679 Device FDS6679 Reel Size 13 Tape width 12mm Quantity 2500 units

2005 Fairchild Semiconductor Corporation

FDS6679 Rev C1 (W)

FDS6679 Datasheet Fairchild Download PDF

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FDS6679 DATASHEET