FDS6679Z

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FDS6679Z

October 2001

FDS6679Z
30 Volt P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features
13 A, 30 V. RDS(ON) 9 m V GS 10 V RDS(ON) 13 m V GS 4.5 V Extended V GSS range ( 25V) for battery applications ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) High power and current handling capability

D

D

D

D
5 6 4 3 2 1

SO-8

S

S

S

G

7 8

Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 25/ 20
(Note 1a)

Units
V V A W

13 50 2.5 1.2 1.0 55 to 175

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ , TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJ C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

50 25

C/W C/W

Package Marking and Ordering Information
Device Marking FDS6679Z Device FDS6679Z Reel Size 13 Tape width 12mm Quantity 2500 units

2001 Fairchild Semiconductor Corporation

FDS6679Z Rev C (W)

FDS6679Z Datasheet Fairchild Download PDF

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FDS6679Z DATASHEET