April 1998

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April 1998

FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features
11.5 A, 30 V. RDS(ON) 0.010 VGS 10 V RDS(ON) 0.015 VGS 4.5 V. Optimized for use in switching DC/DC converters with PWM controllers. Very fast switching. Low gate charge (typical Qg 19 nC).

SOT-23

SuperSOTTM-6

SuperSOTTM-8

SO-8

SOT-223

SOIC-16

5 6 7 8

4 3 2 1

Absolute Maximum Ratings
Symbol Parameter

TA 25oC unless other wise noted
FDS6680 Units

VDSS VGSS ID PD

Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c) (Note 1a)

30 20 11.5 50 2.5 1.2 1 -55 to 150

V V A

W

TJ,TSTG RJA RJC

Operating and Storage Temperature Range

C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

50 25

C/W C/W
FDS6680 Rev.E1

1998 Fairchild Semiconductor Corporation

FDS6680 Datasheet Fairchild Download PDF

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FDS6680 DATASHEET