FDS6680A

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FDS6680A

November 2004

FDS6680A
Single N-Channel, Logic Level, PowerTrench MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
12.5 A, 30 V RDS(ON) 9.5 m VGS 10 V RDS(ON) 13 m VGS 4.5 V Ultra-low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability

D D SO-8

D D

DD D D

5 6 7

4 3 2 1

Pin 1 SO-8

G S G S S S S S
TA 25oC unless otherwise noted

8

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
30 20
(Note 1a)

Units
V A W

12.5 50 2.5 1.2 1.0 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1)

50 25

C/W

Package Marking and Ordering Information
Device Marking FDS6680A Device FDS6680A Reel Size 13 Tape width 12mm Quantity 2500 units

2004 Fairchild Semiconductor Corporation

FDS6680A Rev F1(W)

FDS6680A Datasheet Fairchild Download PDF

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FDS6680A DATASHEET