FDS6681Z

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FDS6681Z

June 2005

FDS6681Z
30 Volt P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
20 A, 30 V. RDS(ON) 4.6 m VGS 10 V RDS(ON) 6.5 m VGS 4.5 V Extended VGSS range ( 25V) for battery applications HBM ESD protection level of 8kV typical (note 3) High performance trench technology for extremely low RDS(ON) High power and current handling capability Termination is Lead-free and RoHS Compliant

D D

D

D
5 6 4 3 2 1

SO-8

S

S

S

G

7 8

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD

TA 25oC unless otherwise noted

Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c) (Note 1a)

Ratings
30 25 20 105 2.5 1.2 1.0 55 to 150

Units
V V A W

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

50 25

C/W C/W

Package Marking and Ordering Information
Device Marking FDS6681Z Device FDS6681Z Reel Size 13 Tape width 12mm Quantity 2500 units

2005 Fairchild Semiconductor Corporation

FDS6681Z Rev B (W)

FDS6681Z Datasheet Fairchild Download PDF

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FDS6681Z DATASHEET