FDS6682

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FDS6682

February 2004

FDS6682
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Features
14 A, 30 V. RDS(ON) 7.5 m VGS 10 V RDS(ON) 9.0 m VGS 4.5 V

Low gate charge (22 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability

Applications
DC/DC converter

D D

D

D
5 6 4 3 2 1

SO-8

S

S

S

G

7 8

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W

14 50 2.5 1.2 1.0 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

50 25

C/W C/W

Package Marking and Ordering Information
Device Marking FDS6682 Device FDS6682 Reel Size 13 Tape width 12mm Quantity 2500 units

2004 Fairchild Semiconductor Corporation

FDS6682 Rev D(W)

FDS6682 Datasheet Fairchild Download PDF

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FDS6682 DATASHEET