FDS6688

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FDS6688

January 2004

FDS6688
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Features
16 A, 30 V. RDS(ON) 6 m VGS 10 V RDS(ON) 7 m VGS 4.5 V

Ultra-low gate charge (40 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability

Applications
DC/DC converter

D D D D SO-8

DD D D

5 6 7

4 3 2 1

Pin 1 SO-8

G S G S S S S S
TA 25oC unless otherwise noted

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W

16 50 2.5 1.4 1.2 55 to 175

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)

50 125 25

C/W C/W C/W

Package Marking and Ordering Information
Device Marking FDS6688 Device FDS6688 Reel Size 13 Tape width 12mm Quantity 2500 units

2004 Fairchild Semiconductor Corporation

FDS6688 Rev D(W)