FDS6689S 30V N-Channel PowerTrench SyncFET

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FDS6689S 30V N-Channel PowerTrench SyncFET

February 2005

FDS6689S
30V N-Channel PowerTrench SyncFETTM
General Description
The FDS6689S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6688S includes an integrated Schottky diode using Fairchild s monolithic SyncFET technology.

Features
16 A, 30 V. RDS(ON) 5.4 m VGS 10 V RDS(ON) 6.5 m VGS 4.5 V Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability 100% RG (Gate Resistance) tested

Applications
Synchronous Rectifier for DC/DC converter Notebook Vcore low side switch Point of Load low side switch

D D

D

D
5 6 4 3 2 1

SO-8

S

S

S

G

7 8

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W

16 50 2.5 1.2 1 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

50 25

C/W

Package Marking and Ordering Information
Device Marking FDS6689S Device FDS6689S Reel Size 13 Tape width 12mm Quantity 2500 units

2005 Fairchild Semiconductor Corporation

FDS6689S Rev B1 (W)

FDS6689S Datasheet Fairchild Download PDF

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FDS6689S DATASHEET