FDS6690A

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FDS6690A

February 2007

FDS6690A
Single N-Channel, Logic-Level, PowerTrench MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

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Features
11 A, 30 V. RDS(ON) 12.5 m VGS 10 V RDS(ON) 17.0 m VGS 4.5 V

Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability

D D SO-8

D D

DD D D

5 6

4 3 2 1

Pin 1 SO-8

G S G S S S S S
TA 25oC unless otherwise noted

7 8

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD EAS TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W mJ C

11 50 2.5 1.0 96 55 to 150

Power Dissipation for Single Operation Single Pulse Avalanche Energy

(Note 1a) (Note 1b) (Note 3)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b) (Note 1)

50 125 25

C/W

Package Marking and Ordering Information
Device Marking FDS6690A
2007 Fairchild Semiconductor Corporation

Device FDS6690A

Reel Size 13

Tape width 12mm

Quantity 2500 units
FDS6690A Rev E1 (W)

FDS6690A Datasheet Fairchild Download PDF

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FDS6690A DATASHEET