FDS6690AS

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FDS6690AS

December 2004

FDS6690AS
30V N-Channel PowerTrench SyncFETTM
General Description
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low and low gate charge. The FDS6690AS RDS(ON) includes an integrated Schottky diode using Fairchild s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.

Features
10 A, 30 V. RDS(ON) max 12 m VGS 10 V RDS(ON) max 15 m VGS 4.5 V Includes SyncFET Schottky diode Low gate charge (16nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability

Applications
DC/DC converter Low side notebooks

D D

D

D
5 6 4 3 2 1

SO-8

S

S

S

G

7 8

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25oC unless otherwise noted

Parameter

Ratings
30 20
(Note 1a)

Units
V V A W

10 50 2.5 1.2 1 55 to 150

Power Dissipation for Single Operation

(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

C

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

50 25

C/W C/W

Package Marking and Ordering Information
Device Marking FDS6690AS FDS6690AS
2004 Fairchild Semiconductor Corporation

Device FDS6690AS FDS6690AS NL (Note 4)

Reel Size 13 13

Tape width 12mm 12mm

Quantity 2500 units 2500 units
FDS6690AS Rev A(X)

FDS6690AS Datasheet Fairchild Download PDF

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FDS6690AS DATASHEET