November 1998

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November 1998

FDS6875 Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.

Features
-6 A, -20 V. RDS(ON) 0.030 VGS -4.5 V, RDS(ON) 0.040 VGS -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

SO-8

SOT-223

SOIC-16

D2 D1 D1 D2
5 4 3 2 1

S FD 75 68
G1 S2 G2

6 7 8

SO-8

pin 1

S1

Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed

TA 25oC unless otherwise noted FDS6875 -20 8
(Note 1a)

Units V V A

-6 -20 2

Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)

W

1.6 1 0.9 -55 to 150 C

TJ,TSTG RJA RJC

Operating and Storage Temperature Range

THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W C/W
FDS6875 Rev.C

1998 Fairchild Semiconductor Corporation

FDS6875 Datasheet Fairchild Download PDF

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FDS6875 DATASHEET