FDS6890A

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FDS6890A

November 1999

FDS6890A
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features 7.5 A, 20 V. RDS(ON) 0.018
VGS 4.5 V RDS(ON) 0.022 VGS 2.5 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.

Applications DC/DC converter Motor drives

D2 D1 D1 S2 G2 D2
5 6 7 8 4 3 2 1

pin 1

G1 S1

SO-8

Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed

T A 25 oC unless otherwise noted

Parameter

Ratings
20 8
(Note 1a)

Units
V V A W

7.5 20 2.0

Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)

1.6 1.0 0.9 -55 to 150 C

T J, T stg

Operating and Storage Junction Temperature Range

Thermal Characteristics
R JA R JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40 90

C/W C/W

Package Marking and Ordering Information
Device Marking FDS6890A Device FDS6890A Reel Size 13 Tape W idth 12mm Quantity 2500 units

1999 Fairchild Semiconductor Corporation

FDS6890A Rev. C

FDS6890A Datasheet Fairchild Download PDF

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FDS6890A DATASHEET