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FDS6898AZ

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FDS6898AZ

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FDS6898AZ

October 2001

FDS6898AZ
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
9.4 A, 20 V RDS(ON) 14 m VGS 4.5 V RDS(ON) 18 m VGS 2.5 V

Low gate charge (16 nC typical) ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) High power and current handling capability

D2 D

D2 D

DD1 D1 D

5 6
G1 S1 G
Q1

4 3 2
Q2

SO-8
Pin 1 SO-8
G2 S2 S

7 8

S

S

1

Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

TA 25 C unless otherwise noted

o

Parameter

Ratings
20 12
(Note 1a)

Units
V V A W

9.4 38 2

Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)

1.6 1 0.9 55 to 150 C

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W C/W

Package Marking and Ordering Information
Device Marking FDS6898AZ
2001 Fairchild Semiconductor Corporation

Device FDS6898AZ

Reel Size 13

Tape width 12mm

Quantity 2500 units
FDS6898AZ Rev C (W)

FDS6898AZ Datasheet Fairchild Download PDF

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